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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5387 DESCRIPTION *High Breakdown Voltage: VCBO= 1200V (Min) *High Switching Speed *Low Saturation Voltage APPLICATIONS *Horizontal deflection output for high resolution display, color TV. *High speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 10 A ICM Collector Current- Pulse 20 A IB B Base Current- Continuous Collector Power Dissipation @ TC=25 Junction Temperature 5 A PC 50 W TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC5387 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 600 V VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 2A B 3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 2A B 1.5 V ICBO Collector Cutoff Current VCB= 1200V; IE= 0 1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 A hFE-1 DC Current Gain IC= 1A ; VCE= 5V 15 35 hFE-2 DC Current Gain IC= 8A ; VCE= 5V 4.3 7.8 fT Current-Gain--Bandwidth Product IC= 0.1A ; VCE= 10V 1.7 MHz COB Output Capacitance IE= 0 ; VCB= 10V; ftest= 1.0MHz 130 pF tstg Storage Time ICP= 6A , IB1(end)= 1.2A;fH= 64kHz 2.5 3.5 s tf Fall Time 0.15 0.3 s isc Websitewww.iscsemi.cn 2 |
Price & Availability of 2SC5387 |
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